Scanning laser and optical beam induced current method for failure analysis of electronic devices

Optical beam testing methods offer several advantages with respect to conventional Scanning Electron Microscopy (SEM) techniques for failure analysis of integrated circuits and discrete devices: they do not require vacuum, avoid MOS and oxide damaging in OBIC (Optical Beam Induced Current) tests. This paper describes the application of scanning laser techniques to failure analysis of integrated circuits and discrete devices. Results have been obtained by means of a commercially available laser system (Biorad Lasersharp SOM 150), equipped with a visible (He-Ne 633 nm, 15 mW) and an IR (laser-diode-pumped Nd:YAG 1320 nm, 25 mW) laser source.