Polysilicon gate high voltage MOS transistors have been submitted to electrical overstress and ESD. By mapping the optical beam induced current (OBIC) in a scanning laser system, shorts created under the device gate can be identified and correlated with electrical measurements
Detection and localization of gate oxide shorts in NMOS transistors by optical beam induced current
ZANONI, ENRICO
1990
Abstract
Polysilicon gate high voltage MOS transistors have been submitted to electrical overstress and ESD. By mapping the optical beam induced current (OBIC) in a scanning laser system, shorts created under the device gate can be identified and correlated with electrical measurementsFile in questo prodotto:
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