Biased life-test and thermal storage at different temperatures have been performed on 2 W GaAs MESFETs. Both decrease of drain current and increase of gate diode reverse current have been found, with an activation energy of 1 and 1.5 eV respectively.
Failures induced in medium power MESFET by thermal storage and biased life test
PACCAGNELLA, ALESSANDRO;ZANONI, ENRICO
1990
Abstract
Biased life-test and thermal storage at different temperatures have been performed on 2 W GaAs MESFETs. Both decrease of drain current and increase of gate diode reverse current have been found, with an activation energy of 1 and 1.5 eV respectively.File in questo prodotto:
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