We investigated the premature gate oxide wear-out occurring under electrical stress after heavy ion irradiation and we have proposed an innovative model based on a non homogeneous Poisson process. We modeled the progressive degradation of the gate current as the superposition of many SB events, whose occurrence times have been randomly generated with exponential distribution probability.
Statistical Model for Radiation Induced Wear-Out of Ultra-Thin Gate Oxides after Exposure to Heavy Ion Irradiation
CESTER, ANDREA;A. Paccagnella
2003
Abstract
We investigated the premature gate oxide wear-out occurring under electrical stress after heavy ion irradiation and we have proposed an innovative model based on a non homogeneous Poisson process. We modeled the progressive degradation of the gate current as the superposition of many SB events, whose occurrence times have been randomly generated with exponential distribution probability.File in questo prodotto:
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