This invited review paper summarizes experimental and simulation results on impact ionization in Si, obtained by studying multiplication and breakdown phenomena in advanced Si and SiGe bipolar transistors.
Impact ionization effects in advanced Si bipolar transistors
ZANONI, ENRICO;
1993
Abstract
This invited review paper summarizes experimental and simulation results on impact ionization in Si, obtained by studying multiplication and breakdown phenomena in advanced Si and SiGe bipolar transistors.File in questo prodotto:
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