The main electrical characteristics at room temperature of metal-resistive layer-semiconductor avalanche detectors are presented for devices with a Ti/SiC/p-Si structure. The device response has been tested by using a Sr-90 source. The consequences on the device behavior induced by substrate inhomogeneities have been modeled, and compared with those occurring in conventional Avalanche Photo Diodes (APD).
Metal-resistive Layer-silicon (mrs) Avalanche Detectors With Negative Feedback
BISELLO, DARIO;PACCAGNELLA, ALESSANDRO;PANTANO, DEVIS;
1995
Abstract
The main electrical characteristics at room temperature of metal-resistive layer-semiconductor avalanche detectors are presented for devices with a Ti/SiC/p-Si structure. The device response has been tested by using a Sr-90 source. The consequences on the device behavior induced by substrate inhomogeneities have been modeled, and compared with those occurring in conventional Avalanche Photo Diodes (APD).File in questo prodotto:
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