We have induced the formation of deep levels in the active channel of GaAs MESFET's by exposing these devices to high fluence of energetic neutrons. A result, we have measured a modification of the main DC parameters, i.e. decrease of IDSS, gm and Vp. By using an experimental technique based on the frequency dispersion of the device transconductance, gm(f), we have been able to indentify at least one of the type of the defects (U-band) introduced in the GaAs substrate by irradiation.
Experimental Study of Deep levels in MESFETs
MENEGHESSO, GAUDENZIO;PACCAGNELLA, ALESSANDRO;
1996
Abstract
We have induced the formation of deep levels in the active channel of GaAs MESFET's by exposing these devices to high fluence of energetic neutrons. A result, we have measured a modification of the main DC parameters, i.e. decrease of IDSS, gm and Vp. By using an experimental technique based on the frequency dispersion of the device transconductance, gm(f), we have been able to indentify at least one of the type of the defects (U-band) introduced in the GaAs substrate by irradiation.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
