Session 19: Quantum, power, and compound semiconductors devices - RF power and optoelectronic devices2008 IEEE International Electron Devices Meeting

The first three papers talk about advanced RF power devices using Si and GaN technologies. The first paper presents a 45 nm LDD Si RF power transistor integrated into CMOS technology with the highest Pout density of 0.6 W/mm at a maximum PAE ever reported among CMOS high breakdown voltage transistors. The second contribution refers to highly linear RF power asymmetric-LDD MOSFETs. The final paper of this part discusses reliability of GaN HEMTs. The second half of the session opens with an invited paper on Si photonic modulators for high-speed applications. This is followed by a demonstration of optical gain in Si resonant cavity for Light Emitting Diodes. The next paper describes the role of non-radiative recombination in the degradation of InGaN-based laser diodes. The final paper of the session presents a unique thin-film bonding technique by intermolecular forces for high-density integration of high-power LEDs.