In this work, the bridge imaging and the reliability of surface-micromachined capacitive RF MEMS switches in III-V technology are presented. A low cost scanning technique allowed us to image the shape of the moveable bridge with a micrometer spatial resolution, thus quantitatively valuating its lowering as a function of the applied voltage. The reliability of the switches was tested under the application of different unipolar and bipolar voltage waveforms, showing that a significant improvement of the switch operation and lifetime can be achieved by applying high frequency bipolar square pulses with suitable durations. © 2013 CMP.

Imaging and reliability of capacitive RF MEMS switches in III-V technology

MENEGHESSO, GAUDENZIO;
2013

Abstract

In this work, the bridge imaging and the reliability of surface-micromachined capacitive RF MEMS switches in III-V technology are presented. A low cost scanning technique allowed us to image the shape of the moveable bridge with a micrometer spatial resolution, thus quantitatively valuating its lowering as a function of the applied voltage. The reliability of the switches was tested under the application of different unipolar and bipolar voltage waveforms, showing that a significant improvement of the switch operation and lifetime can be achieved by applying high frequency bipolar square pulses with suitable durations. © 2013 CMP.
2013
2013 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2013
9781467344777
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2693100
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