Tensile and compressive InxGa12xAs epilayers grown on @001# InP substrates have been analyzed by fluorescence-detected x-ray-absorption fine structure in order to investigate the length variation suffered by Ga-As and In-As atomic bonds under epitaxial strain. A morphological and structural analysis had previously been performed in order to select only pseudomorphic samples with high lattice quality. A clear variation of the nearest-neighbor distances proportional to the tetragonal distortion of the film has been detected. We discuss the relationship between the long- and short-range descriptions of strain accommodation in the framework of an analytical model.

Bond-length variation in InxGa1-xAs/InP strained epitaxial layers

ROMANATO, FILIPPO;DE SALVADOR, DAVIDE;BERTI, MARINA;DRIGO, ANTONIO;
1998

Abstract

Tensile and compressive InxGa12xAs epilayers grown on @001# InP substrates have been analyzed by fluorescence-detected x-ray-absorption fine structure in order to investigate the length variation suffered by Ga-As and In-As atomic bonds under epitaxial strain. A morphological and structural analysis had previously been performed in order to select only pseudomorphic samples with high lattice quality. A clear variation of the nearest-neighbor distances proportional to the tetragonal distortion of the film has been detected. We discuss the relationship between the long- and short-range descriptions of strain accommodation in the framework of an analytical model.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2814880
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 55
  • ???jsp.display-item.citation.isi??? 55
social impact