Monte Carlo analysis of hot-electron degradation in AlGaN/GaN high-electron mobility transistors shows that, for gate voltages corresponding to semi-ON bias conditions, the average electron energy has a spatial peak with < EAVE > similar to 1.5 eV. The peak is located at the edge of the gate. At this location, the carrier versus energy distribution has a large tail extending over 3 eV. When transferred to the lattice, this energy can cause defect dehydrogenation and device degradation. These results are consistent with the experimental data indicating maximum degradation in the semi-ON bias condition.
Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs
PACCAGNELLA, ALESSANDRO;
2014
Abstract
Monte Carlo analysis of hot-electron degradation in AlGaN/GaN high-electron mobility transistors shows that, for gate voltages corresponding to semi-ON bias conditions, the average electron energy has a spatial peak with < EAVE > similar to 1.5 eV. The peak is located at the edge of the gate. At this location, the carrier versus energy distribution has a large tail extending over 3 eV. When transferred to the lattice, this energy can cause defect dehydrogenation and device degradation. These results are consistent with the experimental data indicating maximum degradation in the semi-ON bias condition.File in questo prodotto:
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