Silicon diffusion in aluminium thin films was measured using the configuration of in- diffusion from two constant sources in a specimen of finite thickness. An electron microprobe was used to measure the silicon distribution. The data in the temperature range 475–550 C can be interpreted using the diffusion coefficient
Silicon diffusion in aluminium
PACCAGNELLA, ALESSANDRO;
1985
Abstract
Silicon diffusion in aluminium thin films was measured using the configuration of in- diffusion from two constant sources in a specimen of finite thickness. An electron microprobe was used to measure the silicon distribution. The data in the temperature range 475–550 C can be interpreted using the diffusion coefficientFile in questo prodotto:
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