Silicon diffusion in aluminium thin films was measured using the configuration of in- diffusion from two constant sources in a specimen of finite thickness. An electron microprobe was used to measure the silicon distribution. The data in the temperature range 475–550 C can be interpreted using the diffusion coefficient
Titolo: | Silicon diffusion in aluminium |
Autori: | |
Data di pubblicazione: | 1985 |
Rivista: | |
Abstract: | Silicon diffusion in aluminium thin films was measured using the configuration of in- diffusion from two constant sources in a specimen of finite thickness. An electron microprobe was used to measure the silicon distribution. The data in the temperature range 475–550 C can be interpreted using the diffusion coefficient |
Handle: | http://hdl.handle.net/11577/2932112 |
Appare nelle tipologie: | 01.01 - Articolo in rivista |
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.