Silicon diffusion in aluminium thin films was measured using the configuration of in-diffusion from two constant sources in a specimen of finite thickness. An electron microprobe was used to measure the silicon distribution. The data in the temperature range 475-550 °C can be interpreted using the diffusion coefficient D = 8.3 × 10-3 exp(- 0.81 eV kT) cm2 s-1 These values are much higher than those measured in wrought aluminium. The silicon transport is not affected by the aluminium grain size which ranges from 0.3 to 0.8 μm. © 1985.
Silicon diffusion in aluminium
PACCAGNELLA, ALESSANDRO;
1985
Abstract
Silicon diffusion in aluminium thin films was measured using the configuration of in-diffusion from two constant sources in a specimen of finite thickness. An electron microprobe was used to measure the silicon distribution. The data in the temperature range 475-550 °C can be interpreted using the diffusion coefficient D = 8.3 × 10-3 exp(- 0.81 eV kT) cm2 s-1 These values are much higher than those measured in wrought aluminium. The silicon transport is not affected by the aluminium grain size which ranges from 0.3 to 0.8 μm. © 1985.
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