The Pd2Si growth kinetics for evaporated Pd films on (111) Si have been investigated by means of 2 MeV 4He+backscattering spectrometry for as‐deposited and high dose H implanted samples in the 200–250 °C temperature range. The implantation energy has been chosen so that most of H atoms stop near the Si/Pd interface. The changes in the H distribution in the annealed samples have been investigated by means of the 1H(1 5N, αγ)1 2C resonantnuclear reaction. An increase of the growth rate and a decrease of the activation energy of the silicide formation process have been detected in the implanted samples with respect to the as‐deposited ones. The thermal treatment induces a noticeable decrease of H content.

Effects of implanted hydrogen on Pd2Si formation

PACCAGNELLA, ALESSANDRO;
1985

Abstract

The Pd2Si growth kinetics for evaporated Pd films on (111) Si have been investigated by means of 2 MeV 4He+backscattering spectrometry for as‐deposited and high dose H implanted samples in the 200–250 °C temperature range. The implantation energy has been chosen so that most of H atoms stop near the Si/Pd interface. The changes in the H distribution in the annealed samples have been investigated by means of the 1H(1 5N, αγ)1 2C resonantnuclear reaction. An increase of the growth rate and a decrease of the activation energy of the silicide formation process have been detected in the implanted samples with respect to the as‐deposited ones. The thermal treatment induces a noticeable decrease of H content.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2932113
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