Gate contact degradation of power MESFETs with gold-based gate metallisations is enhanced by local inhomogeneities, such as thermal gradients and border effects.
Gold-based gate-sinking enhanced by inhomogeneities in power MESFETs
PACCAGNELLA, ALESSANDRO
1987
Abstract
Gate contact degradation of power MESFETs with gold-based gate metallisations is enhanced by local inhomogeneities, such as thermal gradients and border effects.File in questo prodotto:
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