An improvement of the gm ( f) dispersion curve and a decrease in breakdown voltage have been observed in power MESFET’s submitted to accelerated tests. These changes are thermally activated and probably due to thermal annealing of surface states. The activation energy, Ea = 1.0 eV, can be used to evaluate device reliability.
Change of g/sub m/(f) and breakdown voltage induced by thermal annealing of surface states in power MESFETs
PACCAGNELLA, ALESSANDRO;
1990
Abstract
An improvement of the gm ( f) dispersion curve and a decrease in breakdown voltage have been observed in power MESFET’s submitted to accelerated tests. These changes are thermally activated and probably due to thermal annealing of surface states. The activation energy, Ea = 1.0 eV, can be used to evaluate device reliability.File in questo prodotto:
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