We report the first demonstration of narrowband parametric amplification in a chip scale semiconductor waveguide. A dispersion engineered, Ga0.5In0.5P photonic crystal waveguide with a dispersion function that exhibits two zero crossings was used with a pulsed pump placed in the normal dispersion regime while a tunable probe was scanned on either side of the pump. A peak conversion efficiency of -10 dB was obtained with a peak pump power of only 650 mW. The narrowband nature of the gain spectrum was clearly demonstrated.
Narrowband optical parametric amplification measurements in Ga0.5In0.5P photonic crystal waveguides
SANTAGIUSTINA, MARCO;
2015
Abstract
We report the first demonstration of narrowband parametric amplification in a chip scale semiconductor waveguide. A dispersion engineered, Ga0.5In0.5P photonic crystal waveguide with a dispersion function that exhibits two zero crossings was used with a pulsed pump placed in the normal dispersion regime while a tunable probe was scanned on either side of the pump. A peak conversion efficiency of -10 dB was obtained with a peak pump power of only 650 mW. The narrowband nature of the gain spectrum was clearly demonstrated.
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