In this paper we report the results of a TCAD simulation study performed on AlGaN/GaN High Electron Mobility Transistor (HEMT). The effects of interface states, leading to drain current dispersion phenomena as a result of fast sweep of the drain voltage, are investigated in transient simulations. The virtual drain model is introduced to explain the drain current overshoot due to drain voltage pulsing.
Toward understanding of donor-traps-related dispersion phenomena on normally-on AlGaN/GaN HEMT through transient simulations
MAGNONE, PAOLO;
2015
Abstract
In this paper we report the results of a TCAD simulation study performed on AlGaN/GaN High Electron Mobility Transistor (HEMT). The effects of interface states, leading to drain current dispersion phenomena as a result of fast sweep of the drain voltage, are investigated in transient simulations. The virtual drain model is introduced to explain the drain current overshoot due to drain voltage pulsing.File in questo prodotto:
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