High brilliance sources in the EUV spectral range such as Synchrotron and Free Electron Lasers (FEL) are widely used in multiple scientific and technological applications thanks to their peculiar characteristics. One main technical problem of FEL is related to the rejection of high harmonics, seed laser, first stage photons, and diffuse light; in order to improve the quality of the beam delivered by these sources, a suitable optical system acting as band-pass filters is necessary. In this paper we discuss the optical and structure characterization of Nb/Zr and Zr/Nb self-stand transmittance filters, designed for 4.5 nm-20 nm wavelength ranges. In order to understand the properties of these bilayers filters, a campaign of measurements has been planned to be performed on Zr and Nb films on Si3N4 membrane windows and silicon substrates, deposited with e- beam deposition technique. Comparison of the results has been planned too. IMD transmittance and reflectance simulations, together with preliminary AFM and reflectance measurements will be shown in this work.
Optical and structural characterization of Nb, Zr, Nb/Zr, Zr/Nb thin films on Si3N4 membranes windows
JIMENEZ TEJEDA, KETY MAYELIN;GABALLAH, AHMED EID HAMED;MALIK, NADEEM AHMED;ZUPPELLA, PAOLA;NICOLOSI, PIERGIORGIO
2017
Abstract
High brilliance sources in the EUV spectral range such as Synchrotron and Free Electron Lasers (FEL) are widely used in multiple scientific and technological applications thanks to their peculiar characteristics. One main technical problem of FEL is related to the rejection of high harmonics, seed laser, first stage photons, and diffuse light; in order to improve the quality of the beam delivered by these sources, a suitable optical system acting as band-pass filters is necessary. In this paper we discuss the optical and structure characterization of Nb/Zr and Zr/Nb self-stand transmittance filters, designed for 4.5 nm-20 nm wavelength ranges. In order to understand the properties of these bilayers filters, a campaign of measurements has been planned to be performed on Zr and Nb films on Si3N4 membrane windows and silicon substrates, deposited with e- beam deposition technique. Comparison of the results has been planned too. IMD transmittance and reflectance simulations, together with preliminary AFM and reflectance measurements will be shown in this work.Pubblicazioni consigliate
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