The description of thermal non-uniformity in large area power MOSFETs requires the modeling of a thermal network to account for the thermal interaction between adjacent devices. In this work we propose a methodology to derive a thermal network which is able to predict the thermal transient as a function of the longitudinal distance from the heat source. The network is calculated by assuming cylindrical propagation of the heat. Electro-thermal numerical simulations are used to verify the accuracy of the proposed model.

Numerical simulation and modeling of thermal transient in silicon power devices

Magnone P.;
2012

Abstract

The description of thermal non-uniformity in large area power MOSFETs requires the modeling of a thermal network to account for the thermal interaction between adjacent devices. In this work we propose a methodology to derive a thermal network which is able to predict the thermal transient as a function of the longitudinal distance from the heat source. The network is calculated by assuming cylindrical propagation of the heat. Electro-thermal numerical simulations are used to verify the accuracy of the proposed model.
2012
Ultimate Integration on Silicon (ULIS)
Ultimate Integration on Silicon (ULIS)
9781467301916
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3292757
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