The generation of the carrier signal with a very low spur level is a key challenge in all the communication systems, especially those operating at mm-waves, where a frequency multiplier is typically used to break the tradeoff between high frequency of operation and low phase noise. This letter describes a frequency tripler tailored to cover the fifth generation new radio 39-GHz frequency range. By embracing the edge-combining concept, together with the combination of a single-stage polyphase filter and a multipoint injection-locked ring oscillator, the proposed frequency multiplier is able to offer robust and consistent high harmonic rejection ratio over a large fractional bandwidth. Fabricated in 28-nm bulk CMOS technology, the measured frequency multiplier features >40-dBc harmonic rejection over an outstanding 35% fractional bandwidth, while consuming 25 mW only from 0.9-V supply. To the best of our knowledge, the proposed multiplier achieves the highest harmonic rejection among the state-of-the-art multipliers in CMOS and BiCMOS technologies, while having 60% smaller area.

A 39-GHz Frequency Tripler With >40-dBc Harmonic Rejection for 5G Communication Systems in 28-nm Bulk CMOS

Bevilacqua, Andrea
2019

Abstract

The generation of the carrier signal with a very low spur level is a key challenge in all the communication systems, especially those operating at mm-waves, where a frequency multiplier is typically used to break the tradeoff between high frequency of operation and low phase noise. This letter describes a frequency tripler tailored to cover the fifth generation new radio 39-GHz frequency range. By embracing the edge-combining concept, together with the combination of a single-stage polyphase filter and a multipoint injection-locked ring oscillator, the proposed frequency multiplier is able to offer robust and consistent high harmonic rejection ratio over a large fractional bandwidth. Fabricated in 28-nm bulk CMOS technology, the measured frequency multiplier features >40-dBc harmonic rejection over an outstanding 35% fractional bandwidth, while consuming 25 mW only from 0.9-V supply. To the best of our knowledge, the proposed multiplier achieves the highest harmonic rejection among the state-of-the-art multipliers in CMOS and BiCMOS technologies, while having 60% smaller area.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3313520
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 17
  • ???jsp.display-item.citation.isi??? 6
social impact