This work provides a solution allowing to monitor on-line the health of a power MOSFET adopted in a buck converter. In the considered application, the analysis is focused on the high-side switch, being a low-voltage power MOSFET. The monitoring system allows estimating the on-resistance of the device by measuring both output current and voltage drop across the switch. Moreover, a semi-empirical model is considered in order to account for the dependence of the on-resistance on operating temperature and gate driving voltage. The on-line implementation of such a model allows estimating on-resistance degradation in real-time with a high level of accuracy in a wide range of operating conditions. An on-line calibration procedure is also implemented in order to assess the on-resistance of fresh devices. Experimental results confirm the accuracy of the system (in conjunction with the proposed model) under different operating conditions: load current from 2A to 6A; device temperature up to 100°C and gate to source voltage (VGS) from 6V to 10.5V. In the abovementioned conditions, an accuracy ≤2.6% is experimentally found. Hence, the system is able to properly estimate the degradation of on-resistance due to ageing conditions.

Simplified on-line monitoring system of MOSFET on-resistance based on a semi-empirical model

Magnone P.;Petucco A.;THEVENET, NICOLA;ABEDINI, Hossein
2019

Abstract

This work provides a solution allowing to monitor on-line the health of a power MOSFET adopted in a buck converter. In the considered application, the analysis is focused on the high-side switch, being a low-voltage power MOSFET. The monitoring system allows estimating the on-resistance of the device by measuring both output current and voltage drop across the switch. Moreover, a semi-empirical model is considered in order to account for the dependence of the on-resistance on operating temperature and gate driving voltage. The on-line implementation of such a model allows estimating on-resistance degradation in real-time with a high level of accuracy in a wide range of operating conditions. An on-line calibration procedure is also implemented in order to assess the on-resistance of fresh devices. Experimental results confirm the accuracy of the system (in conjunction with the proposed model) under different operating conditions: load current from 2A to 6A; device temperature up to 100°C and gate to source voltage (VGS) from 6V to 10.5V. In the abovementioned conditions, an accuracy ≤2.6% is experimentally found. Hence, the system is able to properly estimate the degradation of on-resistance due to ageing conditions.
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
978-1-5386-8330-9
File in questo prodotto:
File Dimensione Formato  
abstract.pdf

accesso aperto

Tipologia: Preprint (submitted version)
Licenza: Accesso gratuito
Dimensione 582.54 kB
Formato Adobe PDF
582.54 kB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/3313624
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? 2
social impact