Self-Assembly Monolayers (SAMs) are considered a promising route for solving technological hindrances (such as bias-stress, contact resistance, charge trapping) affecting the electrical performances of the Organic Field-Effect Transistors (OFETs). Here we use an OFET based on pentacene thin film to investigate the charge transport across conjugated SAMs at the Au/pentacene interface. We synthesized a homolog series of p-conjugated molecules, termed Tn-C8-SH, consisting of a n-unit oligothienyl Tn (n = 1. . .4) bound to an octane-1-thiol (C8-SH) chain that self-assembles on the Au electrodes. The multi-parametric response of such devices yields an exponential behavior of the field-effect mobility (l), current density (J), and total resistivity (R), due to the SAM at the charge injection interface (i.e. Au-SAM-pentacene). The surface treatment of the OFETs induces a clear stabilization of different parameters, like sub-threshold slope and threshold voltage, thanks to standardized steps in the fabrication process
Organic field-effect transistors as new paradigm for large-area molecular junctions
Casalini S.
;
2012
Abstract
Self-Assembly Monolayers (SAMs) are considered a promising route for solving technological hindrances (such as bias-stress, contact resistance, charge trapping) affecting the electrical performances of the Organic Field-Effect Transistors (OFETs). Here we use an OFET based on pentacene thin film to investigate the charge transport across conjugated SAMs at the Au/pentacene interface. We synthesized a homolog series of p-conjugated molecules, termed Tn-C8-SH, consisting of a n-unit oligothienyl Tn (n = 1. . .4) bound to an octane-1-thiol (C8-SH) chain that self-assembles on the Au electrodes. The multi-parametric response of such devices yields an exponential behavior of the field-effect mobility (l), current density (J), and total resistivity (R), due to the SAM at the charge injection interface (i.e. Au-SAM-pentacene). The surface treatment of the OFETs induces a clear stabilization of different parameters, like sub-threshold slope and threshold voltage, thanks to standardized steps in the fabrication processPubblicazioni consigliate
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