Inductively heatable susceptor and epitaxial deposition reactor

The present invention concerns a susceptor comprising a disc-shaped portion (21) and a cylindrical or conical portion (22); the disc-shaped portion (21) is used to (directly or indirectly) support one or more substrates to be subjected to epitaxial deposition inside a reaction chamber of an epitaxial deposition reactor; the cylindrical or conical portion (22) is used to contribute to the heating of the disc-shaped portion (21); thanks to the configuration of the susceptor, it is possible to heat the disc-shaped portion (21) to a very uniform temperature; in fact, for example, the heating of the susceptor can be obtained through a first inductor (4) adapted to directly heat the disc-shaped portion (21), in particular its outer annular zone, and a second inductor (5) adapted to directly heat the cylindrical or conical portion (22) and indirectly heat the disc-shaped portion (21), in particular its central zone.