The reactor (100) for deposition of layers of semiconductor material on substrates, comprises: a reaction chamber (110), a susceptor assembly (120) located inside the reaction chamber, and a heating system (130) adapted to heat the susceptor assembly by electromagnetic induction; the heating system (130) comprises a first (131) inductor and a second (132) inductor and a power supply (135) adapted to electrically feed the first and second inductors (131, 132) with alternating currents that are distinct and independent from one another; the reactor (100) further comprises a shielding assembly (140) adapted to limit electromagnetic coupling between the first and the second inductors (131, 132).

Deposition reactor with inductors and electromagnetic shields

Michele Forzan;
2020

Abstract

The reactor (100) for deposition of layers of semiconductor material on substrates, comprises: a reaction chamber (110), a susceptor assembly (120) located inside the reaction chamber, and a heating system (130) adapted to heat the susceptor assembly by electromagnetic induction; the heating system (130) comprises a first (131) inductor and a second (132) inductor and a power supply (135) adapted to electrically feed the first and second inductors (131, 132) with alternating currents that are distinct and independent from one another; the reactor (100) further comprises a shielding assembly (140) adapted to limit electromagnetic coupling between the first and the second inductors (131, 132).
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/3439626
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