Analysis and Design of Integrated Drivers in GaN Technology for LIDAR Application

The relentless advancement of autonomous vehicles, industrial automation,and robotics has increased the demand for high-performance LiDAR (Light Detection and Ranging) systems to unprecedented levels. The primary objective of this research is to advance the state-of-the-art in LiDAR technology by focusing on the analysis and design of LiDAR drivers utilizing integrated Gallium Nitride (GaN) semiconductor technology. GaN has emerged as a promising candidate due to its exceptional performance characteristics, including high electron mobility and power handling capabilities. This thesis examines the aspects of integrated circuit design, semiconductor physics, and device reliability, converging these disciplines to develop robust and efficient GaN-based LiDAR drivers. The first part describes the design of a driver prototype whose current pulse can reach a peak of 20A with a sub-nanosecond rise time. For a proper design of circuits and systems, designers need accurate compact models for their transistors, including factors that can impede the optimal functioning of these components. For this reason, the second part of the project focused on a measurement system for on-wafer GaN HEMTs, which can be exploited to test their performance and reliability. These results are intended to contribute to the collective body of knowledge, providing insights for future researchers and advancing our comprehension of GaN HEMTs.