Fully Depleted MAPS in 110-nm CMOS Process With 100–300-μm Active Substrate

This article presents a fully depleted monolithic active pixel sensor technology compatible with a standard deep submicrometer 110-nm CMOS process. Passive test pixels structures, produced in various flavors, have proved the feasibility of 100- and 300-mu m-thick active substrates. Active pixel sensors with monolithically integrated analog and digital electronics, consisting of a 24 x 24 array of pixelswith 50-mu m pitch, have been shown to be fully functionalwhen operating in the full depletion mode. Characterization results obtained with a proton microbeam and a Fe-55 radiation source are presented and discussed.