MILAZZO, RUGGERO
 Distribuzione geografica
Continente #
NA - Nord America 398
EU - Europa 126
AS - Asia 77
AF - Africa 3
Totale 604
Nazione #
US - Stati Uniti d'America 394
IT - Italia 40
CN - Cina 37
FR - Francia 20
PL - Polonia 16
FI - Finlandia 14
KR - Corea 11
DE - Germania 10
JP - Giappone 9
GB - Regno Unito 7
IN - India 7
TW - Taiwan 6
HK - Hong Kong 5
CA - Canada 4
ES - Italia 4
NL - Olanda 4
UA - Ucraina 3
IE - Irlanda 2
LT - Lituania 2
SE - Svezia 2
ZA - Sudafrica 2
GR - Grecia 1
MA - Marocco 1
MY - Malesia 1
RU - Federazione Russa 1
SG - Singapore 1
Totale 604
Città #
Fairfield 53
Houston 37
Woodbridge 27
Ann Arbor 26
Buffalo 24
Seattle 24
Ashburn 23
Santa Cruz 20
Cambridge 19
Padova 18
Wilmington 15
Beijing 13
Lappeenranta 9
Paris 7
Shanghai 7
Des Moines 6
Bengaluru 5
Helsinki 5
Los Angeles 5
San Diego 5
Hangzhou 4
Milan 4
Phoenix 4
Waltham 4
Central 3
Clearwater 3
Columbus 3
Daejeon 3
Enna 3
Hsinchu 3
Las Vegas 3
Madrid 3
New York 3
Osaka 3
Passau 3
Portland 3
San Jose 3
Turin 3
Boardman 2
Brendola 2
Council Bluffs 2
Dublin 2
Fuzhou 2
Hong Kong 2
Lake Forest 2
London 2
Miami 2
Riva 2
Rotterdam 2
Salt Lake City 2
Seodaemun-gu 2
Surrey 2
Taipei 2
Tokyo 2
Toronto 2
University Park 2
Warsaw 2
Zhengzhou 2
Albignasego 1
Athens 1
Austin 1
Bangalore 1
Bergen 1
Bologna 1
Canary Wharf 1
Chicago 1
College Station 1
Costa Mesa 1
Crugers 1
Deruta 1
Fremont 1
Glasgow 1
Guangzhou 1
Hamden 1
Hanabatacho 1
Henlow 1
Kobe 1
Muizenberg 1
Mumbai 1
Naaldwijk 1
Nanjing 1
Otwock 1
Pasadena 1
Penang 1
Piaseczno 1
Piscataway 1
Providence 1
Provo 1
Radzymin 1
Redmond 1
Scranton 1
Seongnam-si 1
Settat 1
Silverton 1
Stanford 1
Summit 1
Suzhou 1
Tampa 1
Trowbridge 1
Wuhan 1
Totale 488
Nome #
Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing, file e14fb26a-c78d-3de1-e053-1705fe0ac030 286
Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium, file e14fb26a-cb9b-3de1-e053-1705fe0ac030 152
Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium, file e14fb26b-4b13-3de1-e053-1705fe0ac030 117
Doping of germanium by ion-implantation and laser annealing in the melting regime, file e14fb26f-a3a2-3de1-e053-1705fe0ac030 51
Ex-situ n-type heavy doping of Ge1-xSnx epilayers by surface Sb deposition and pulsed laser melting, file 12d441c7-dd30-4c69-8aa4-2bc73a2826a4 22
High level active n(+) doping of strained germanium through co-implantation and nanosecond pulsed laser melting, file e14fb26b-4b14-3de1-e053-1705fe0ac030 3
Indiffusion of oxygen in germanium induced by pulsed laser melting, file e14fb26b-7119-3de1-e053-1705fe0ac030 3
Switching Between Giant Positive and Negative Thermal Expansions of a YFe(CN)6-based Prussian Blue Analogue Induced by Guest Species, file e14fb26a-305f-3de1-e053-1705fe0ac030 1
Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors, file e14fb26b-7671-3de1-e053-1705fe0ac030 1
Totale 636
Categoria #
all - tutte 1.468
article - articoli 1.330
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.798


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201933 0 0 0 0 0 0 0 0 0 0 18 15
2019/2020131 11 9 5 17 15 7 11 15 15 10 7 9
2020/202194 2 17 3 4 3 3 2 13 4 24 18 1
2021/2022164 8 8 17 29 23 6 11 5 8 4 32 13
2022/202381 4 8 26 9 2 12 4 7 0 1 6 2
2023/2024111 3 5 0 8 15 13 10 13 18 15 11 0
Totale 636