Ge1-xSnx alloys have attracted considerable attention for their promising electrical and optical properties. One of the main challenges for their successful implementation in devices concerns the fabrication of n-type heavily doped surface layers. In this work, a new methodology for ex-situ doping of Ge1-xSnx layers is investigated. It consists of the deposition of Sb atoms on the surface of Ge1-xSnx layers followed by pulsed laser melting (PLM) that ensures the diffusion of Sb into the alloy. We demonstrate that Sb is incorporated very efficiently within a relaxed Ge0.91Sn0.09 epilayer, with supersaturated 4 × 1020 cm−3 active concentrations, in line with literature records obtained in Ge1-xSnx with in-situ approaches. At the same time, we observe that the concentration of substitutional Sn close to the surface decreases from 9 to about 6 at. % after PLM, inducing a contraction of the lattice parameter perpendicular to the underlying Ge1-xSnx. These results demonstrate a possible route for ex-situ n-type heavy doping of Ge1-xSnx alloys, but indicate also that Sn redistribution and precipitation phenomena need to be carefully considered for a successful process development.

Ex-situ n-type heavy doping of Ge1-xSnx epilayers by surface Sb deposition and pulsed laser melting

Fontana D.;Sgarbossa F.
;
Milazzo R.;Di Russo E.;De Salvador D.;Napolitani E.
2022

Abstract

Ge1-xSnx alloys have attracted considerable attention for their promising electrical and optical properties. One of the main challenges for their successful implementation in devices concerns the fabrication of n-type heavily doped surface layers. In this work, a new methodology for ex-situ doping of Ge1-xSnx layers is investigated. It consists of the deposition of Sb atoms on the surface of Ge1-xSnx layers followed by pulsed laser melting (PLM) that ensures the diffusion of Sb into the alloy. We demonstrate that Sb is incorporated very efficiently within a relaxed Ge0.91Sn0.09 epilayer, with supersaturated 4 × 1020 cm−3 active concentrations, in line with literature records obtained in Ge1-xSnx with in-situ approaches. At the same time, we observe that the concentration of substitutional Sn close to the surface decreases from 9 to about 6 at. % after PLM, inducing a contraction of the lattice parameter perpendicular to the underlying Ge1-xSnx. These results demonstrate a possible route for ex-situ n-type heavy doping of Ge1-xSnx alloys, but indicate also that Sn redistribution and precipitation phenomena need to be carefully considered for a successful process development.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3453095
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