statistiche ricercatore

Nome	#
Degradation processes and origin in InGaN-based high-power photodetectors	93
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment	92
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs	74
Evidence of optically induced degradation in gallium nitride optoelectronic devices	69
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment	59
Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures	58
Vertical breakdown of GaN on Si due to V-pits	48
High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applications	47
Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices	37
Photon-driven degradation processes in GaN-based optoelectronic devices	30
GaN-based power devices: Physics, reliability, and perspectives	23
Totale	630

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2018/2019	18	0	0	0	0	0	0	0	0	0	0	9	9
2019/2020	144	7	2	2	2	5	4	4	5	44	40	14	15
2020/2021	182	5	16	21	17	1	4	36	18	15	15	23	11
2021/2022	129	2	15	11	11	11	7	4	16	13	5	8	26
2022/2023	93	19	1	2	5	18	11	1	10	16	2	8	0
2023/2024	51	2	4	6	6	5	19	3	1	1	4	0	0
Totale													630