MEDJDOUB, FARID

MEDJDOUB, FARID  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 11 di 11 (tempo di esecuzione: 0.048 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices 2018 C. De SantiM. MeneghiniCARIA, ALESSANDRON. RensoMEDJDOUB, FARIDE. ZanoniG. Meneghesso + - - Proceedings of the Compound Semiconductor Week 2018
Evidence of optically induced degradation in gallium nitride optoelectronic devices 2018 De Santi, CarloCaria, AlessandroRenso, NicolaMedjdoub, FaridMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + APPLIED PHYSICS EXPRESS - -
Degradation processes and origin in InGaN-based high-power photodetectors 2018 De Santi, CarloMeneghini, M.CARIA, ALESSANDROMEDJDOUB, FARIDZanoni, E.Meneghesso, G. + PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING - Proceedings of SPIE - The International Society for Optical Engineering
Photon-driven degradation processes in GaN-based optoelectronic devices 2019 C. De SantiA. CariaN. RensoF. MedjdoubG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment 2019 Borga M.Meneghini M.Canato E.Medjdoub F.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs 2019 Rzin M.Meneghini M.Rampazzo F.De Santi C.Medjdoub F.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures 2019 Tajalli A.Meneghini M.Meneghesso G.Medjdoub F. + PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Vertical breakdown of GaN on Si due to V-pits 2020 Tajalli A.Meneghini M.Medjdoub F.Meneghesso G. + JOURNAL OF APPLIED PHYSICS - -
High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applications 2020 Tajalli A.Meneghini M.Zanoni E.Medjdoub F.Meneghesso G. + MATERIALS - -
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment 2020 Tajalli A.Borga M.Meneghini M.Santi C. D.Zanoni E.Medjdoub F.Meneghesso G. + MICROMACHINES - -
GaN-based power devices: Physics, reliability, and perspectives 2021 Meneghini M.De Santi C.Buffolo M.Chini A.Medjdoub F.Meneghesso G.Verzellesi G.Zanoni E. + JOURNAL OF APPLIED PHYSICS - -