Abstract--ln this work we report on hot-electron stress experiments performed on commercial AlGaAs/InGaAs/GaAs pseudomorphic HEMTs. The stress cycles induce a permanent increase of the gate-drain breakdown voltage (breakdown walkout). Different characterization techniques are applied to the devices under test, consistently indicating that the physical mechanism underlying walkout is the build-up of negative charge in the region between the gate and drain.

A Study of Hot-Electron Degradation Effects in pseudomorphic HEMTs

MENEGHESSO, GAUDENZIO
1997

Abstract

Abstract--ln this work we report on hot-electron stress experiments performed on commercial AlGaAs/InGaAs/GaAs pseudomorphic HEMTs. The stress cycles induce a permanent increase of the gate-drain breakdown voltage (breakdown walkout). Different characterization techniques are applied to the devices under test, consistently indicating that the physical mechanism underlying walkout is the build-up of negative charge in the region between the gate and drain.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/118185
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