We have investigated the degradation of MOS structure due to high energy electron irradiation as a function of radiation dose and gate bias applied during the irradiation. Devices have been characterized by current-voltage measurements, in order to study charge accumulation also at the gate interface. Three types of oxide charge have been observed: the unstable positive charge, due to trapped holes induced by the electron irradiation; the negative charge in the oxide bulk, deriving from capture of electrons injected during electrical measurements in radiation generated traps; and border traps, at both oxide interfaces.

Degradation of electron irradiated MOS capacitors

CANDELORI, ANDREA;PACCAGNELLA, ALESSANDRO;
1999

Abstract

We have investigated the degradation of MOS structure due to high energy electron irradiation as a function of radiation dose and gate bias applied during the irradiation. Devices have been characterized by current-voltage measurements, in order to study charge accumulation also at the gate interface. Three types of oxide charge have been observed: the unstable positive charge, due to trapped holes induced by the electron irradiation; the negative charge in the oxide bulk, deriving from capture of electrons injected during electrical measurements in radiation generated traps; and border traps, at both oxide interfaces.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/130715
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