In this work we have shown that SILC in thin oxides can be effectively reduced at room temperature by performing low field current injection. By increasing the amount of injected charge, SILC continuously decreases and no saturation steady state level is reached. We attribute this decrease to the passivation of the oxide weak spots by electron trapping in those defects mediating SILC. This poses some questions on the true meaning of DC SILC, on the corresponding methods of measurements, and on its impact on the device lifetime.

RECOVERY OF SILC IN ULTRA-THIN GATE OXIDES BY LOW FIELD ELECTRON INJECTION

CESTER, ANDREA
2001

Abstract

In this work we have shown that SILC in thin oxides can be effectively reduced at room temperature by performing low field current injection. By increasing the amount of injected charge, SILC continuously decreases and no saturation steady state level is reached. We attribute this decrease to the passivation of the oxide weak spots by electron trapping in those defects mediating SILC. This poses some questions on the true meaning of DC SILC, on the corresponding methods of measurements, and on its impact on the device lifetime.
2001
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/1341493
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