The effect of air/AlGaN and GaN/substrate polarization charges on the performances of GaN-based HEMTs have been investigated. We find that surface charges and, with a minor extend, GaN/substrate charges are responsible for the observed premature saturation of the dc output characteristics. Moreover, our work show that the polarization charges and holes trap appear as the source of the drain current collapse observed in GaN-based HEMTs.

Current collapse associated with surface states in GaN based HEMT's. Theoretical / experimental investigations

MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2004

Abstract

The effect of air/AlGaN and GaN/substrate polarization charges on the performances of GaN-based HEMTs have been investigated. We find that surface charges and, with a minor extend, GaN/substrate charges are responsible for the observed premature saturation of the dc output characteristics. Moreover, our work show that the polarization charges and holes trap appear as the source of the drain current collapse observed in GaN-based HEMTs.
2004
Simulation of Semiconductor Processes and Devices 2004
9783211224687
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/1376333
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