Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon

The evolution of ultra-low energy B implants is investigated after post-implantation annealing, both in terms of atomic diffusion and electrical activation of the doping atoms. The electrical activation of the ultra-low energy implanted B is shown to connected to its diffusion. With increasing the dose, the motion of B is supported by the increased amount of ion beam generated interstitials. The electrical activation, which can be achieved by the ultra-low energy implants, is between 10 and 40% after annealing at 1100 °C, depending on the implanted dose.