NAPOLITANI, ENRICO
NAPOLITANI, ENRICO
Dipartimento di Fisica e Astronomia "Galileo Galilei" - DFA
Plasma processing of the silicon surface: A novel method to reduce transient enhanced diffusion of boron
1998 G., Mannino; F., Priolo; V., Privitera; V., Raineri; C., Spinella; Napolitani, Enrico; Carnera, Alberto; G., Arena; A., Messina; C., Rapisarda
A novel method to suppress transient enhanced diffusion of low energy implanted boron based on reactive plasma etching
1998 Privitera, V.; Priolo, F.; Mannino, G.; Napolitani, Enrico; Carnera, Alberto
The effect of the impurity content and of the surface on the electrical activation of low energy implanted boron in crystalline Si
1998 Privitera, V.; Priolo, F.; Mannino, G.; Napolitani, Enrico; Carnera, Alberto
Lattice-matched Zn1-yCdySe/InxGa1-xAs(001) heterostructures
1998 B. H., Muller; R., Lantier; L., Sorba; S., Rubini; M., Lazzarino; S., Heun; A., Bonanni; A., Franciosi; Napolitani, Enrico; Romanato, Filippo; Drigo, Antonio
Lattice curvature of InxGa1-xAs/GaAs [001] graded buffer layers
1998 Romanato, Filippo; M., Natali; Napolitani, Enrico; Drigo, Antonio; A., Bosacchi; C., Ferrari; S., Franchi; G., Salviati
Role of surface and of dopant-impurity interactions on the electrical activation of B implants in crystalline Si
1998 F., Priolo; G., Mannino; M., Micciche; V., Privitera; Napolitani, Enrico; Carnera, Alberto
Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures
1998 B., Muller; S., Heun; R., Lantier; S., Rubini; J. J., Paggel; L., Sorba; A., Bonanni; M., Lazzarino; B., Bonanni; A., Franciosi; Napolitani, Enrico; Romanato, Filippo; Drigo, Antonio; J. M., Bonard; J. D., Ganiere; L., Lazzarini; G., Salviati
Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon
1999 Privitera, V.; Napolitani, Enrico; Priolo, F.; Moffat, S.; LA MAGNA, A.; Mannino, G.; Carnera, Alberto; Picariello, A.
Clustering of ultra-low-energy implanted Boron in Silicon during postimplantation annealing
1999 Schroer, E.; Privitera, V.; Priolo, F.; Napolitani, Enrico; Carnera, Alberto
Microscopical aspects of boron diffusion in ultralow energy implanted silicon
1999 Napolitani, Enrico; Carnera, Alberto; Schroer, E.; Privitera, V.; Priolo, F.
Transient diffusion effects of Sb and B in Si induced by medium- and high-energy implants of Si/sup +/ and As/sup +/ ions
1999 Lulli, G.; Solmi, S.; Bianconi, M.; Napolitani, Enrico; Carnera, Alberto
Ultra-low energy boron implants in crystalline silicon: atomic transport properties and electrical activation
1999 Napolitani, Enrico; Carnera, Alberto; Privitera, V.; LA MAGNA, A.; Schroer, E.; Priolo, F.; Mannino, G.; Moffatt, S.
Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon
1999 Mannino, G; Priolo, F; Privitera, V; Napolitani, Enrico; Carnera, Alberto
Coherence length of strain relaxation mechanisms in InGaAs/GaAs[001] graded buffer layer
1999 Romanato, Filippo; M., Natali; Napolitani, Enrico; DE SALVADOR, Davide; Drigo, Antonio; S., Gennari; C., Ferrari; S., Franchi; G., Salviati
Strain relaxation in graded composition InxGa1-xAs/GaAs buffer layers
1999 Romanato, Filippo; Napolitani, Enrico; Carnera, Alberto; Drigo, Antonio; L., Lazzarini; G., Salviati; C., Ferrari; A., Bosacchi; S., Franchi
Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers
1999 B. H., Muller; R., Lantier; L., Sorba; S., Heun; S:, Rubini; M., Lazzarino; A., Franciosi; Napolitani, Enrico; Romanato, Filippo; Drigo, Antonio; L., Lazzarini; G., Salviati
Electrical behavior of ultra-low energy implanted boron in silicon
2000 Privitera, V; Schroer, E; Priolo, F; Napolitani, Enrico; Carnera, Alberto
Transient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source
2000 Schroer, E; Privitera, V; Priolo, F; Napolitani, Enrico; Carnera, Alberto
Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument
2000 Napolitani, Enrico; Carnera, Alberto; Storti, Renzo; Privitera, V; Priolo, F; Mannino, G; Moffatt, S.
Mesoscopic capacitor effect in GaN/AlGaN quantum wells
2000 Lomascolo, M.; Traetta, G.; Passaseo, A.; Pomarico, A.; Cingolani, R.; DI CARLO, A.; Lugli, P.; Bonfiglio, A.; Berti, Marina; Napolitani, Enrico; Sinha, S. K.; Drigo, Antonio