NAPOLITANI, ENRICO

NAPOLITANI, ENRICO  

Dipartimento di Fisica e Astronomia "Galileo Galilei" - DFA  

Risultati 1 - 20 di 202 (tempo di esecuzione: 0.035 secondi).
Titolo Data di pubblicazione Autore(i) Rivista Serie Titolo libro
Lattice-matched Zn1-yCdySe/InxGa1-xAs(001) heterostructures 1998 NAPOLITANI, ENRICOROMANATO, FILIPPODRIGO, ANTONIO + JOURNAL OF CRYSTAL GROWTH - -
Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures 1998 NAPOLITANI, ENRICOROMANATO, FILIPPODRIGO, ANTONIO + JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B - -
Role of surface and of dopant-impurity interactions on the electrical activation of B implants in crystalline Si 1998 NAPOLITANI, ENRICOCARNERA, ALBERTO + APPLIED PHYSICS LETTERS - -
The effect of the impurity content and of the surface on the electrical activation of low energy implanted boron in crystalline Si 1998 NAPOLITANI, ENRICOCARNERA, ALBERTO + - - 1998 International Conference on Ion Implantation Technology
Plasma processing of the silicon surface: A novel method to reduce transient enhanced diffusion of boron 1998 NAPOLITANI, ENRICOCARNERA, ALBERTO + JOURNAL OF APPLIED PHYSICS - -
Lattice curvature of InxGa1-xAs/GaAs [001] graded buffer layers 1998 ROMANATO, FILIPPONAPOLITANI, ENRICODRIGO, ANTONIO + JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. A. VACUUM, SURFACES, AND FILMS - -
A novel method to suppress transient enhanced diffusion of low energy implanted boron based on reactive plasma etching 1998 NAPOLITANI, ENRICOCARNERA, ALBERTO + - - 1998 International Conference on Ion Implantation Technology.
Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon 1999 NAPOLITANI, ENRICOCARNERA, ALBERTO + MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - -
Plasma processing: a novel method to reduce the transient enhanced diffusion of boron implanted in silicon 1999 NAPOLITANI, ENRICOCARNERA, ALBERTO + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
Strain relaxation in graded composition InxGa1-xAs/GaAs buffer layers 1999 ROMANATO, FILIPPONAPOLITANI, ENRICOCARNERA, ALBERTODRIGO, ANTONIO + JOURNAL OF APPLIED PHYSICS - -
Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers 1999 NAPOLITANI, ENRICOROMANATO, FILIPPODRIGO, ANTONIO + JOURNAL OF APPLIED PHYSICS - -
Microscopical aspects of boron diffusion in ultralow energy implanted silicon 1999 NAPOLITANI, ENRICOCARNERA, ALBERTO + APPLIED PHYSICS LETTERS - -
Clustering of ultra-low-energy implanted Boron in Silicon during postimplantation annealing 1999 NAPOLITANI, ENRICOCARNERA, ALBERTO + APPLIED PHYSICS LETTERS - -
Ultra-low energy boron implants in crystalline silicon: atomic transport properties and electrical activation 1999 NAPOLITANI, ENRICOCARNERA, ALBERTO + - - Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions
Transient diffusion effects of Sb and B in Si induced by medium- and high-energy implants of Si/sup +/ and As/sup +/ ions 1999 NAPOLITANI, ENRICOCARNERA, ALBERTO + - - Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions
Coherence length of strain relaxation mechanisms in InGaAs/GaAs[001] graded buffer layer 1999 ROMANATO, FILIPPONAPOLITANI, ENRICODE SALVADOR, DAVIDEDRIGO, ANTONIO + - - First International Workshop on Lattice Mismatched and Heterovalent Thin Film Epitaxy.
Lattice parameter of Si1-x-yGexCy alloys 2000 DE SALVADOR, DAVIDEBERTI, MARINAROMANATO, FILIPPONAPOLITANI, ENRICODRIGO, ANTONIO + PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - -
Transient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source 2000 NAPOLITANI, ENRICOCARNERA, ALBERTO + APPLIED PHYSICS LETTERS - -
Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling 2000 NAPOLITANI, ENRICOCARNERA, ALBERTO + MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - -
Mesoscopic capacitor effect in GaN/AlGaN quantum wells 2000 BERTI, MARINANAPOLITANI, ENRICODRIGO, ANTONIO + - - -