The impact of process fluctuations on the variability of deep sub-micron (DSM) VLSI circuit performances is investigated in this paper. In particular, we show that, as process dimensions scale down in the sub half-micron region, the relative weight of process variability tends to increase, thus wearing down a nonnegligible portion of the benefits that are expected from minimum feature size scaling. Therefore, in order to better exploit the advance of process technology, it is essential to adopt a realistic approach to worst case modeling, as in the assigned probability technique (APT) (Dal Fabbro et al, Proc. 32nd ACM/IEEE Design Automation Conf., pp. 702-6, 1995). The application of the APT technique to a 16-bit ripple-carry adder designed in 0.35 μm, 0.25 μm and 0.18 μm CMOS technologies with a power supply ranging from 3.3 V down to 1 V demonstrates how the manufacturability of DSM designs is going to be a vital factor for the successful implementation of high performance or low-power systems in 0.18 μm and lesser technologies.
Impact of Unrealistic Worst-Case Modelling on the Performance of VLSI Circuits in Deep Sub-Micron CMOS Technologies
NEVIANI, ANDREA;ZANONI, ENRICO;
1998
Abstract
The impact of process fluctuations on the variability of deep sub-micron (DSM) VLSI circuit performances is investigated in this paper. In particular, we show that, as process dimensions scale down in the sub half-micron region, the relative weight of process variability tends to increase, thus wearing down a nonnegligible portion of the benefits that are expected from minimum feature size scaling. Therefore, in order to better exploit the advance of process technology, it is essential to adopt a realistic approach to worst case modeling, as in the assigned probability technique (APT) (Dal Fabbro et al, Proc. 32nd ACM/IEEE Design Automation Conf., pp. 702-6, 1995). The application of the APT technique to a 16-bit ripple-carry adder designed in 0.35 μm, 0.25 μm and 0.18 μm CMOS technologies with a power supply ranging from 3.3 V down to 1 V demonstrates how the manufacturability of DSM designs is going to be a vital factor for the successful implementation of high performance or low-power systems in 0.18 μm and lesser technologies.Pubblicazioni consigliate
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