NEVIANI, ANDREA
NEVIANI, ANDREA
Dipartimento di Ingegneria dell'Informazione - DEI
PHYSICAL MODELS FOR HETEROSTRUCTURE FET SIMULATION
1990 Lugli, P; Neviani, Andrea; Saraniti, M.
Impact Ionization Phenomena In GaAs-MESFETs - Experimental Results and Simulations
1992 Neviani, Andrea; C., Tedesco; Zanoni, Enrico; C. U., Naldi; M., Pirola
Rapid degradation induced by hot electrons in AlGaAs/GaAs HEMTs
1992 C., Tedesco; C., Canali; Neviani, Andrea; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Zanoni, Enrico
IMPACT IONIZATION PHENOMENA IN GAAS-MESFETS - EXPERIMENTAL RESULTS AND SIMULATIONS
1992 Neviani, Andrea; Tedesco, C; Zanoni, Enrico; Naldi, Cu; Pirola, M.
IMPACT IONIZATION AND LIGHT-EMISSION IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
1993 Neviani, Andrea; Tedesco, C; Zanoni, Enrico; Canali, C; Manfredi, M; Cetronio, A.
DEPENDENCE OF IONIZATION CURRENT ON GATE BIAS IN GAAS-MESFETS
1993 Canali, C; Neviani, Andrea; Tedesco, C; Zanoni, Enrico; Cetronio, A; Lanzieri, C.
Hot-electron-induced light emission and impact ionization in GaAs-based devices
1993 Carlo, Tedesco; C., Canali; M., Manfredi; Neviani, Andrea; Zanoni, Enrico
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS
1994 Canali, C; Capasso, F; Malik, R; Neviani, Andrea; Pavan, P; Tedesco, C; Zanoni, Enrico
EXPERIMENTAL CHARACTERIZATION OF HOT-ELECTRON-INDUCED EFFECTS AND LIGHT-EMISSION IN HETEROSTRUCTURE DEVICES
1994 Zanoni, Enrico; Neviani, Andrea; Tedesco, C; Manfredi, M; Canali, C.
Instabilities induced by DX-center and impact-ionization hole injection in AlGaAs/InGaAs PM-HEMT's
1994 C., Canali; E., De Bortoli; Meneghesso, Gaudenzio; Neviani, Andrea; A. Paccagnella L., Vendrame; Zanoni, Enrico
Hot-electron Induced effects, light emission, breakdown and reliability problems phenomena in GaAs MESFET's AlGaAs/GaAs HEMT's and AlGaAs/InGaAS pseudomorphic HEMT's
1994 Zanoni, Enrico; Neviani, Andrea; Meneghesso, Gaudenzio; E., De Bortoli; L., Vendrame; A., Rizzato
Reliability issues due to hot-electron effects in GaAs-based MESFETs and HEMTs
1994 Zanoni, Enrico; C., Tedesco; Neviani, Andrea; Meneghesso, Gaudenzio
A new degradation mechanism induced by DX-center in AlGaAs/InGaAs PM-HEMT's
1994 Zanoni, Enrico; E., De Bortoli; Meneghesso, Gaudenzio; Neviani, Andrea; L., Vendrame; A. Paccagnella C., Canali
Measurement and Simulation of P-buffer Mesfets In Impact Ionization Regime
1994 Neviani, Andrea; R., Chieu; C., Tedesco; Zanoni, Enrico
Measurement of the electron ionization coefficient at low electric fields in InGaAs-based heterojunction bipolar transistors
1995 C., Canali; C., Forzan; Neviani, Andrea; L., Vendrame; Zanoni, Enrico; R. A., Hamm; R. J., Malik; F., Capasso; S., Chandrasekhar
Measurement of the Electron Ionization Coefficient At Low Electric-fields In Heterojunction Bipolar-transistors
1995 C., Canali; S., Chandrasekhar; F., Capasso; R. A., Hamm; R., Malik; C., Forzan; Neviani, Andrea; L., Vendrame; Zanoni, Enrico
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's
1996 Canali, C; Pavan, P; Dicarlo, A; Lugli, P; Malik, R; Manfredi, M; Neviani, Andrea; Vendrame, L; Zanoni, Enrico; Zandler, G.
A New Structure for Video-Rate 2D SC FIR Filters
1996 Cortelazzo, GUIDO MARIA; Malavasi, E; Gerosa, Andrea; Neviani, Andrea
Analysis of charge storage in the base of bipolar transistors and its influence on the parasitic resistance adopting an eight terminal Kelvin test structureProceedings of International Conference on Microelectronic Test Structures
1996 S., Asti; T., Cavioni; Neviani, Andrea; P., Pavan; M., Stival; L., Vendrame; Zanoni, Enrico
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTsInternational Electron Devices Meeting. Technical Digest
1996 Meneghesso, Gaudenzio; A., Mion; Neviani, Andrea; M., Matloubian; J., Brown; M., Hafizi; Takyiu, Liu; C., Canali; M., Pavesi; M., Manfredi; Zanoni, Enrico