NEVIANI, ANDREA

NEVIANI, ANDREA  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
PHYSICAL MODELS FOR HETEROSTRUCTURE FET SIMULATION 1990 NEVIANI, ANDREA + EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS - -
Impact Ionization Phenomena In GaAs-MESFETs - Experimental Results and Simulations 1992 NEVIANI, ANDREAZANONI, ENRICO + INSTITUTE OF PHYSICS CONFERENCE SERIES - Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds;
Rapid degradation induced by hot electrons in AlGaAs/GaAs HEMTs 1992 NEVIANI, ANDREAMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDROZANONI, ENRICO + - - GaAs and related compounds 1992
IMPACT IONIZATION PHENOMENA IN GAAS-MESFETS - EXPERIMENTAL RESULTS AND SIMULATIONS 1992 NEVIANI, ANDREAZANONI, ENRICO + INSTITUTE OF PHYSICS CONFERENCE SERIES - -
IMPACT IONIZATION AND LIGHT-EMISSION IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS 1993 NEVIANI, ANDREAZANONI, ENRICO + JOURNAL OF APPLIED PHYSICS - -
DEPENDENCE OF IONIZATION CURRENT ON GATE BIAS IN GAAS-MESFETS 1993 NEVIANI, ANDREAZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Hot-electron-induced light emission and impact ionization in GaAs-based devices 1993 NEVIANI, ANDREAZANONI, ENRICO + - - Physical concepts and materials for novel optoelectronic device applications II
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS 1994 NEVIANI, ANDREAZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
EXPERIMENTAL CHARACTERIZATION OF HOT-ELECTRON-INDUCED EFFECTS AND LIGHT-EMISSION IN HETEROSTRUCTURE DEVICES 1994 ZANONI, ENRICONEVIANI, ANDREA + SEMICONDUCTOR SCIENCE AND TECHNOLOGY - -
Instabilities induced by DX-center and impact-ionization hole injection in AlGaAs/InGaAs PM-HEMT's 1994 MENEGHESSO, GAUDENZIONEVIANI, ANDREAZANONI, ENRICO + - - -
Hot-electron Induced effects, light emission, breakdown and reliability problems phenomena in GaAs MESFET's AlGaAs/GaAs HEMT's and AlGaAs/InGaAS pseudomorphic HEMT's 1994 ZANONI, ENRICONEVIANI, ANDREAMENEGHESSO, GAUDENZIO + - - -
Reliability issues due to hot-electron effects in GaAs-based MESFETs and HEMTs 1994 ZANONI, ENRICONEVIANI, ANDREAMENEGHESSO, GAUDENZIO + - - Symposium on the Degradation of Electronic Devices Due to Device Operation as Well as Crystalline and Process-Induced Defects
A new degradation mechanism induced by DX-center in AlGaAs/InGaAs PM-HEMT's 1994 ZANONI, ENRICOMENEGHESSO, GAUDENZIONEVIANI, ANDREA + - - -
Measurement and Simulation of P-buffer Mesfets In Impact Ionization Regime 1994 NEVIANI, ANDREAZANONI, ENRICO + INSTITUTE OF PHYSICS CONFERENCE SERIES - GaAs and related compounds 1993
Measurement of the electron ionization coefficient at low electric fields in InGaAs-based heterojunction bipolar transistors 1995 NEVIANI, ANDREAZANONI, ENRICO + APPLIED PHYSICS LETTERS - -
Measurement of the Electron Ionization Coefficient At Low Electric-fields In Heterojunction Bipolar-transistors 1995 NEVIANI, ANDREAZANONI, ENRICO + INSTITUTE OF PHYSICS CONFERENCE SERIES - Compound semiconductors 1994
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's 1996 NEVIANI, ANDREAZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
A New Structure for Video-Rate 2D SC FIR Filters 1996 CORTELAZZO, GUIDO MARIAGEROSA, ANDREANEVIANI, ANDREA + - - EUSIPCO-96
Analysis of charge storage in the base of bipolar transistors and its influence on the parasitic resistance adopting an eight terminal Kelvin test structureProceedings of International Conference on Microelectronic Test Structures 1996 NEVIANI, ANDREAZANONI, ENRICO + - - Proceedings of International Conference on Microelectronic Test Structures
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTsInternational Electron Devices Meeting. Technical Digest 1996 MENEGHESSO, GAUDENZIONEVIANI, ANDREAZANONI, ENRICO + - - -