AlGaN/GaN high-electron mobility transistors (HEMTs) are excellent candidates for high-power and high frequency applications due to the superior properties of the GaN-based material. In fact GaN-based material is characterized by: high breakdown field, high electron mobility, high peak saturation velocity and high thermal conductivity. These properties allow the GaN-based devices to operate at voltages and temperature ranges beyond the more conventional compound semiconductor materials (GaAs and InP). Furthermore very high frequencies operation (beyond 100 GHz) has been proved for these devices.
Parasitic effects and reliability issues on GaN based HEMTs
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2007
Abstract
AlGaN/GaN high-electron mobility transistors (HEMTs) are excellent candidates for high-power and high frequency applications due to the superior properties of the GaN-based material. In fact GaN-based material is characterized by: high breakdown field, high electron mobility, high peak saturation velocity and high thermal conductivity. These properties allow the GaN-based devices to operate at voltages and temperature ranges beyond the more conventional compound semiconductor materials (GaAs and InP). Furthermore very high frequencies operation (beyond 100 GHz) has been proved for these devices.File in questo prodotto:
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