This paper shows results obtained on AlGaN/GaN HEMTs processed on epitaxy grown on composite substrates. The results are very promising for the fabrication of low cost high power microwave transistors for wireless communication systems. The composite substrates constitute a valuable alternative to the silicon since better thermal properties are expected.
Characterisation of AlGaN/GaN HEMT epitaxy and devices on composite substrates
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2007
Abstract
This paper shows results obtained on AlGaN/GaN HEMTs processed on epitaxy grown on composite substrates. The results are very promising for the fabrication of low cost high power microwave transistors for wireless communication systems. The composite substrates constitute a valuable alternative to the silicon since better thermal properties are expected.File in questo prodotto:
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