The influence of temperature on deuterium or hydrogen diffusion in GaAsN is investigated by secondary ion mass spectrometry and photoluminescence PL. Deuterium incorporation at 200 °C leads to an extremely sharp D concentration profile, which decreases by a factor of 10 within 5 nm. This has great relevance to the attainment of an in-plane band gap engineering of dilute nitrides as demonstrated by PL in ensembles of artificial GaAsN wires.
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN.H heterostructures
BISOGNIN, GABRIELE;BERTI, MARINA;
2008
Abstract
The influence of temperature on deuterium or hydrogen diffusion in GaAsN is investigated by secondary ion mass spectrometry and photoluminescence PL. Deuterium incorporation at 200 °C leads to an extremely sharp D concentration profile, which decreases by a factor of 10 within 5 nm. This has great relevance to the attainment of an in-plane band gap engineering of dilute nitrides as demonstrated by PL in ensembles of artificial GaAsN wires.
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