BISOGNIN, GABRIELE

BISOGNIN, GABRIELE  

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Risultati 1 - 20 di 54 (tempo di esecuzione: 0.043 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Suppression of boron transient enhanced diffusion by C trapping 2002 DE SALVADOR, DAVIDEBISOGNIN, GABRIELENAPOLITANI, ENRICOBERTI, MARINACARNERA, ALBERTODRIGO, ANTONIO + - - 9th International Autumn Meeting. Gettering and Defect Engineering in Semiconductor Technology
Interaction between self-interstitials and substitutional C in silicon: Interstitial trapping and C clustering mechanism 2002 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELEBERTI, MARINACARNERA, ALBERTODRIGO, ANTONIO + PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - -
New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon 2003 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELEBERTI, MARINACARNERA, ALBERTODRIGO, ANTONIO + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
Quantitative determination of short-range ordering in InxGa1- xAs1-yNy 2003 DE SALVADOR, DAVIDEBISOGNIN, GABRIELE + PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - -
Self interstitials diffusion and clustering with impurities in crystalline silicon 2004 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELEBERTI, MARINACARNERA, ALBERTODRIGO, ANTONIO + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
Lattice strain and composition of boron-interstitial clusters in crystalline silicon 2004 DE SALVADOR, DAVIDEBISOGNIN, GABRIELENAPOLITANI, ENRICODRIGO, ANTONIOCARNERA, ALBERTO + - - Material Research Society Spring Meeting
Determination of lattice parameter and of N lattice location in InxGa1-xNyAs1-y/GaAs and GaNyAs1-y/GaAs epilayers 2004 BISOGNIN, GABRIELEDE SALVADOR, DAVIDEBERTI, MARINADRIGO, ANTONIO + JOURNAL OF APPLIED PHYSICS - -
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 2004 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELEBERTI, MARINADRIGO, ANTONIOCARNERA, ALBERTO + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 2004 BISOGNIN, GABRIELEDE SALVADOR, DAVIDENAPOLITANI, ENRICOBERTI, MARINACARNERA, ALBERTODRIGO, ANTONIO + MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY - -
Implantation and activation of high concentrations of Boron in Germanium 2005 BISOGNIN, GABRIELEDE SALVADOR, DAVIDE + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si 2005 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELECARNERA, ALBERTO + APPLIED PHYSICS LETTERS - -
Dissolution kinetics of B clusters in crystalline Si 2005 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELECARNERA, ALBERTO + MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY - -
Effect of strain on the carrier mobility in heavily doped p-type Si 2006 BISOGNIN, GABRIELENAPOLITANI, ENRICODE SALVADOR, DAVIDE + PHYSICAL REVIEW LETTERS - -
Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si 2006 BISOGNIN, GABRIELEDE SALVADOR, DAVIDENAPOLITANI, ENRICOCARNERA, ALBERTO + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
Carrier mobility and strain effect in heavily doped p-type Si 2006 BISOGNIN, GABRIELENAPOLITANI, ENRICODE SALVADOR, DAVIDE + MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY - -
Hydrogen-nitrogen complexes in dilute nitride alloys: origin of the compressive strain 2006 BISOGNIN, GABRIELEDE SALVADOR, DAVIDEDRIGO, ANTONIONAPOLITANI, ENRICOBERTI, MARINA + APPLIED PHYSICS LETTERS - -
Lattice strain induced by boron clusters in crystalline silicon 2006 BISOGNIN, GABRIELEDE SALVADOR, DAVIDENAPOLITANI, ENRICOCARNERA, ALBERTO + SEMICONDUCTOR SCIENCE AND TECHNOLOGY - -
Nitrogen-induced hindering of In incorporation in InGaAsN 2006 BISOGNIN, GABRIELEDE SALVADOR, DAVIDEBERTI, MARINADRIGO, ANTONIO + APPLIED PHYSICS LETTERS - -
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 2006 DI MARINO, MARCONAPOLITANI, ENRICOMASTROMATTEO, MASSIMOBISOGNIN, GABRIELEDE SALVADOR, DAVIDECARNERA, ALBERTO + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
Atomistic Mechanism of Boron Diffusion in Silicon 2006 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELECARNERA, ALBERTO + PHYSICAL REVIEW LETTERS - -