BISOGNIN, GABRIELE

BISOGNIN, GABRIELE  

Mostra records
Risultati 1 - 20 di 54 (tempo di esecuzione: 0.058 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Atomistic Mechanism of Boron Diffusion in Silicon 2006 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELECARNERA, ALBERTO + PHYSICAL REVIEW LETTERS - -
B clustering in amorphous Si 2008 DE SALVADOR, DAVIDEBISOGNIN, GABRIELEDI MARINO, MARCONAPOLITANI, ENRICOCARNERA, ALBERTO + JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B - -
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 2006 DI MARINO, MARCONAPOLITANI, ENRICOMASTROMATTEO, MASSIMOBISOGNIN, GABRIELEDE SALVADOR, DAVIDECARNERA, ALBERTO + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
Boron diffusion in extrinsically doped crystalline silicon 2010 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELECARNERA, ALBERTO + PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - -
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 2004 BISOGNIN, GABRIELEDE SALVADOR, DAVIDENAPOLITANI, ENRICOBERTI, MARINACARNERA, ALBERTODRIGO, ANTONIO + MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY - -
Carrier mobility and strain effect in heavily doped p-type Si 2006 BISOGNIN, GABRIELENAPOLITANI, ENRICODE SALVADOR, DAVIDE + MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY - -
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 2010 BISOGNIN, GABRIELEMASTROMATTEO, MASSIMONAPOLITANI, ENRICODE SALVADOR, DAVIDECARNERA, ALBERTOBERTI, MARINA + THIN SOLID FILMS - -
Determination of lattice parameter and of N lattice location in InxGa1-xNyAs1-y/GaAs and GaNyAs1-y/GaAs epilayers 2004 BISOGNIN, GABRIELEDE SALVADOR, DAVIDEBERTI, MARINADRIGO, ANTONIO + JOURNAL OF APPLIED PHYSICS - -
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 2004 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELEBERTI, MARINADRIGO, ANTONIOCARNERA, ALBERTO + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
Dissolution kinetics of B clusters in crystalline Si 2005 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELECARNERA, ALBERTO + MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY - -
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN.H heterostructures 2008 BISOGNIN, GABRIELEBERTI, MARINA + APPLIED PHYSICS LETTERS - -
Effect of strain on the carrier mobility in heavily doped p-type Si 2006 BISOGNIN, GABRIELENAPOLITANI, ENRICODE SALVADOR, DAVIDE + PHYSICAL REVIEW LETTERS - -
Evidence for a new hydrogen complex in dilute nitride alloys 2007 BISOGNIN, GABRIELEDE SALVADOR, DAVIDENAPOLITANI, ENRICOBERTI, MARINA + - - -
Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy 2007 DE SALVADOR, DAVIDEBISOGNIN, GABRIELENAPOLITANI, ENRICO + APPLIED PHYSICS LETTERS - -
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation 2006 DE SALVADOR, DAVIDEBISOGNIN, GABRIELEDI MARINO, MARCONAPOLITANI, ENRICOCARNERA, ALBERTO + APPLIED PHYSICS LETTERS - -
Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si 2005 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELECARNERA, ALBERTO + APPLIED PHYSICS LETTERS - -
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon 2008 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELECARNERA, ALBERTO + MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY - -
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si 2010 MASTROMATTEO, MASSIMODE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELECARNERA, ALBERTO + PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - -
Formation and dissolution of D-N complexes in dilute nitrides 2007 BERTI, MARINABISOGNIN, GABRIELEDE SALVADOR, DAVIDENAPOLITANI, ENRICO + PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - -
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 2009 DE SALVADOR, DAVIDEBISOGNIN, GABRIELENAPOLITANI, ENRICOMASTROMATTEO, MASSIMOCARNERA, ALBERTO + APPLIED PHYSICS LETTERS - -