New GGSCR Schottky-contact based to be adopted as ESD protection structure has been developed and analyzed trough TCAD simulations. It occupies less space with respect traditional SCR, but has the same advantages. Besides, it presents two different holding voltages: one low during an ESD event and the other high during normal operation condition.

Alternative GGnMOS Triggered SCR ESD Protection Structure in CMOS Technology for the Manufacture of High- Density Integration Circuits

MARINO, FABIO ALESSIO;MENEGHESSO, GAUDENZIO
2008

Abstract

New GGSCR Schottky-contact based to be adopted as ESD protection structure has been developed and analyzed trough TCAD simulations. It occupies less space with respect traditional SCR, but has the same advantages. Besides, it presents two different holding voltages: one low during an ESD event and the other high during normal operation condition.
1585371505
9781585371501
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2273243
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