MARINO, FABIO ALESSIO

MARINO, FABIO ALESSIO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Alternative ESD Protection Structure in CMOS Technology for the Manufacture of High-Density Integration Circuits 2007 MARINO, FABIO ALESSIOMENEGHESSO, GAUDENZIO - - -
Field Effect Transistor with Metal-Semiconductor Junction 2007 MARINO, FABIO ALESSIOMENEGHESSO, GAUDENZIO - - -
Holding voltage investigation of advanced SCR-based protection structures for CMOS technology 2007 TAZZOLI, AUGUSTOMARINO, FABIO ALESSIOZANONI, ENRICOMENEGHESSO, GAUDENZIO + MICROELECTRONICS RELIABILITY - -
Alternative MOS Devices for the Manufacture of High-Density ICs 2007 MARINO, FABIO ALESSIOMENEGHESSO, GAUDENZIO - - -
Transistore ad effetto di campo con giunzione metallo semiconduttore 2008 MARINO, FABIO ALESSIOMENEGHESSO, GAUDENZIO - - -
Alternative GGnMOS Triggered SCR ESD Protection Structure in CMOS Technology for the Manufacture of High- Density Integration Circuits 2008 MARINO, FABIO ALESSIOMENEGHESSO, GAUDENZIO - - -
Passivation degradation induced by thermal storage on AlGaN/GaN HEMTs 2008 DANESIN, FRANCESCAMARINO, FABIO ALESSIOTAZZOLI, AUGUSTOZANON, FRANCOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - -
Development of a New High Holding Voltage SCR-based ESD Protection Structure 2008 MENEGHESSO, GAUDENZIOTAZZOLI, AUGUSTOMARINO, FABIO ALESSIO + - - -
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 2009 PACCAGNELLA, ALESSANDROMARINO, FABIO ALESSIO - - -
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 2009 PACCAGNELLA, ALESSANDROMARINO, FABIO ALESSIO - - -
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 2009 MENEGHESSO, GAUDENZIOZANONI, ENRICODANESIN, FRANCESCAZANON, FRANCORAMPAZZO, FABIANAMARINO, FABIO ALESSIO + - - -
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 2010 PACCAGNELLA, ALESSANDROMARINO, FABIO ALESSIO - - -
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 2010 PACCAGNELLA, ALESSANDROMARINO, FABIO ALESSIO - - -
Advanced Simulation Methods for the Development and Characterization of New Devices 2010 Marino, Fabio Alessio - - -
Double-Halo Field-Effect Transistor—A Multifunction Device to Sustain the Speed and Density Rate of Modern Integrated Circuits 2011 MARINO, FABIO ALESSIOMENEGHESSO, GAUDENZIO IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node 2011 PACCAGNELLA, ALESSANDROMARINO, FABIO ALESSIO - - -
Multifunctional Field-Effect Transistor for High-Density Integrated Circuits 2011 MARINO, FABIO ALESSIOMENEGHESSO, GAUDENZIO IEEE ELECTRON DEVICE LETTERS - -
Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications 2014 MARINO, FABIO ALESSIOSTOCCO, ANTONIOBARBATO, MARCOZANONI, ENRICOMENEGHESSO, GAUDENZIO IEEE ELECTRON DEVICE LETTERS - -
Multi-gate Enhancement Mode AlGaN/GaN HEMT 2014 MARINO, FABIO ALESSIODE SANTI, CARLOMENEGHESSO, GAUDENZIO + - - Heterostructure Technology Workshop (HETECH)
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs 2014 BISI, DAVIDEMENEGHINI, MATTEOMARINO, FABIO ALESSIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -