The radiation damage produced in silica glass implanted with Ar+ and Au+ ions at different implantation energies and fluences was depth profiled by positron annihilation spectroscopy. The modification of the sub-nanovoids structure of the glass was investigated by measuring the change in the Doppler broadening of the 511keV positron annihilation line induced by the quenching of positronium, and the increasing of positron annihilation with oxygen defects. Two distinct defected regions were pointed out. The first region was found to be confined below the ion projected range Rp, and the second extended deep into the sample, up to two to three times the Rp plus the range straggling Rp. The type, origin and concentration of the defects are discussed.
Radiation damage characterization in implanted silica
MAZZOLDI, PAOLO;MATTEI, GIOVANNI;
2009
Abstract
The radiation damage produced in silica glass implanted with Ar+ and Au+ ions at different implantation energies and fluences was depth profiled by positron annihilation spectroscopy. The modification of the sub-nanovoids structure of the glass was investigated by measuring the change in the Doppler broadening of the 511keV positron annihilation line induced by the quenching of positronium, and the increasing of positron annihilation with oxygen defects. Two distinct defected regions were pointed out. The first region was found to be confined below the ion projected range Rp, and the second extended deep into the sample, up to two to three times the Rp plus the range straggling Rp. The type, origin and concentration of the defects are discussed.Pubblicazioni consigliate
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