Gallium Nitride has proved by now to be one of the most interesting compound semiconductors for high-speed and high-power technological applications. Its wide bandgap makes it a suitable solution for sustaining high voltages, and its ability to form heterojunctions, together with its high saturation velocity, makes it an exceptional candidate for the fabrication of High-Electron Mobility Transistors (HEMTs). However, the most critical issue of GaN-based devices is reliability: a number of technological solutions like surface passivation, field-plate structures, and gate recessing have been developed in the last years in order to overcome reliability problems both in dc and RF operation.
Study of GaN HEMTs degradation by numerical simulations of scattering parameters
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2010
Abstract
Gallium Nitride has proved by now to be one of the most interesting compound semiconductors for high-speed and high-power technological applications. Its wide bandgap makes it a suitable solution for sustaining high voltages, and its ability to form heterojunctions, together with its high saturation velocity, makes it an exceptional candidate for the fabrication of High-Electron Mobility Transistors (HEMTs). However, the most critical issue of GaN-based devices is reliability: a number of technological solutions like surface passivation, field-plate structures, and gate recessing have been developed in the last years in order to overcome reliability problems both in dc and RF operation.
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