The electrostatic-discharge sensitivity of fully depleted SOI MOSFETs with ultrathin silicon body and ultrathin gate oxide is studied. An original and detailed electrical analysis is carried out in order to investigate the degradation of the electrical dc parameters and classify the observed failure modes and mechanisms. The impact of device geometry and strain engineering is also analyzed.

Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs

GRIFFONI, ALESSIO;MENEGHESSO, GAUDENZIO;
2010

Abstract

The electrostatic-discharge sensitivity of fully depleted SOI MOSFETs with ultrathin silicon body and ultrathin gate oxide is studied. An original and detailed electrical analysis is carried out in order to investigate the degradation of the electrical dc parameters and classify the observed failure modes and mechanisms. The impact of device geometry and strain engineering is also analyzed.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2425514
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