The electrostatic-discharge sensitivity of fully depleted SOI MOSFETs with ultrathin silicon body and ultrathin gate oxide is studied. An original and detailed electrical analysis is carried out in order to investigate the degradation of the electrical dc parameters and classify the observed failure modes and mechanisms. The impact of device geometry and strain engineering is also analyzed.
Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs
GRIFFONI, ALESSIO;MENEGHESSO, GAUDENZIO;
2010
Abstract
The electrostatic-discharge sensitivity of fully depleted SOI MOSFETs with ultrathin silicon body and ultrathin gate oxide is studied. An original and detailed electrical analysis is carried out in order to investigate the degradation of the electrical dc parameters and classify the observed failure modes and mechanisms. The impact of device geometry and strain engineering is also analyzed.File in questo prodotto:
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