Nanocrystals of wide band gap materials (GaN and In2O3) were synthesized by sequential ion implantation in dielectric substrates, followed by thermal annealing of the samples. Transmission electron microscopy, extended X-ray absorption fine structure spectroscopy and grazing incidence X-ray diffraction analyses confirmed the formation of GaN and In2O3 crystalline nanoparticles. Blue shift of the near-edge photoluminescence (PL) band (quantum con-finement effect) was observed for GaN nanocrystals. A strong PL band peaked at 3.35 eV was detected upon excitation of In2O3 nanocrystals at 5.20 eV.
Synthesis of wide band gap nanocrystals by ion implantation
MATTEI, GIOVANNI;MAURIZIO, CHIARA;MAZZOLDI, PAOLO;SADA, CINZIA;
2002
Abstract
Nanocrystals of wide band gap materials (GaN and In2O3) were synthesized by sequential ion implantation in dielectric substrates, followed by thermal annealing of the samples. Transmission electron microscopy, extended X-ray absorption fine structure spectroscopy and grazing incidence X-ray diffraction analyses confirmed the formation of GaN and In2O3 crystalline nanoparticles. Blue shift of the near-edge photoluminescence (PL) band (quantum con-finement effect) was observed for GaN nanocrystals. A strong PL band peaked at 3.35 eV was detected upon excitation of In2O3 nanocrystals at 5.20 eV.File in questo prodotto:
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