In this paper deeplevel eects are investigated in HSiC buried gate nchannel JFETs by means of mea surements and simulations of the draincurrent ID transients following a gatetosource voltage VGS step Deep levels present in the JFETs are detected by means of capacitancemode C and currentmode I Deep Level Transient Spectroscopy DLTS Subsequent simulation of the ID transients allows the energetic and spatial position of the dierent deep levels to be inferred
Two-Dimensional Numerical Simulation of Deep Level Effect in 6H-SiC Buried-Gate JFETs
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2001
Abstract
In this paper deeplevel eects are investigated in HSiC buried gate nchannel JFETs by means of mea surements and simulations of the draincurrent ID transients following a gatetosource voltage VGS step Deep levels present in the JFETs are detected by means of capacitancemode C and currentmode I Deep Level Transient Spectroscopy DLTS Subsequent simulation of the ID transients allows the energetic and spatial position of the dierent deep levels to be inferred
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