The reliability of Mo-based Schottky contact for an AlGaN=GaN HEMT after a thermal storage test is reported. Electrical and chemical analyses demonstrate the stability of Mo=Au gate for a GaN HEMT after a 2000 h ageing test at temperatures up to 340C.
Thermal stability of Mo-based Schottky contact for AlGaN/GaN HEMT
SOZZA, ALBERTO;ZANONI, ENRICO
2005
Abstract
The reliability of Mo-based Schottky contact for an AlGaN=GaN HEMT after a thermal storage test is reported. Electrical and chemical analyses demonstrate the stability of Mo=Au gate for a GaN HEMT after a 2000 h ageing test at temperatures up to 340C.File in questo prodotto:
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